Mosfet Irfp250

Posted By admin On 29.04.21

©2002 Fairchild Semiconductor Corporation IRFP250 Rev. B IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.
Power MOSFET IRFP250, SiHFP250 Vishay Siliconix FEATURES. Dynamic dV/dt Rating. Repetitive Avalanche Rated. Isolated Central Mounting Hole.Fas St wcthniig. Ease of Paralleling. Simple Drive Requirements. Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the.

Irfp250 Mosfet Price

IRFP250 PDF DOWNLOAD - 7 Oct Parameter. Continuous Drain Current, VGS @ 10V. Continuous Drain Current, VGS @ 10V. N-Channel V 30A (Tc).

Número de Parte: IRFP250

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 180 W

Tensión drenaje-fuente |Vds|: 200 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 33 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 117 nC

Tiempo de elevación (tr): 50 nS

Conductancia de drenaje-sustrato (Cd): 420 pF

Resistencia drenaje-fuente RDS(on): 0.085 Ohm

Empaquetado / Estuche: TO247

IRFP250 Datasheet (PDF)

0.1. irfp250.pdf Size:271K _st

IRFP250N-CHANNEL 200V - 0.073 - 33A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRFP250 200V

0.2. irfp250npbf.pdf Size:180K _international_rectifier

PD - 95007AIRFP250NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechni

0.3. irfp250-253.pdf Size:501K _international_rectifier

0.4. irfp250pbf.pdf Size:3344K _international_rectifier

PD - 95008IRFP250PbF Lead-Freewww.irf.com 12/11/04IRFP250PbF2 www.irf.comIRFP250PbFwww.irf.com 3IRFP250PbF4 www.irf.comIRFP250PbFwww.irf.com 5IRFP250PbF6 www.irf.comIRFP250PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.

0.5. irfp250.pdf Size:164K _international_rectifier

0.6. irfp250mpbf.pdf Size:636K _international_rectifier

PD - 96292IRFP250MPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

0.7. irfp250n.pdf Size:122K _international_rectifier

PD - 94008IRFP250NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.075G Fully Avalanche Rated Ease of ParallelingID = 30AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

0.8. irfp250a.pdf Size:926K _samsung

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

0.9. irfp250 sihfp250.pdf Size:1453K _vishay

IRFP250, SiHFP250Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.085 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140COMPLIANT Fast SwitchingQgs (nC) 28 Ease of ParallelingQgd (nC) 74 Simple Drive RequirementsConfiguration Single Compli

0.10. irfp250r irfp252r.pdf Size:188K _harris_semi

0.11. irfp250npbf.pdf Size:260K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NPBFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

0.12. irfp250m.pdf Size:241K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250MIIRFP250MFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

0.13. irfp250.pdf Size:400K _inchange_semiconductor

iscN-Channel MOSFET Transistor IRFP250FEATURESLow drain-source on-resistance:RDS(ON) 85m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.14. irfp250n.pdf Size:241K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NIIRFP250NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Otros transistores... IRFP240A, IRFP240FI, IRFP241, IRFP242, IRFP243, IRFP244, IRFP244A, IRFP245, IRF630, IRFP250A, IRFP251, IRFP252, IRFP253, IRFP254, IRFP254A, IRFP255, IRFP260.

Liste

Recientemente añadidas las descripciónes de los transistores:

Here is the 200W MOSFET amplifier powered based on four piece of IRFP250N, they are very cheap and easy to find in the electronic market in your area. The circuit has been assembled and tested with very good performance.

This 200W MOSFET amplifier circuit designed for single or mono audio channel application. You should build two similar circuits for stereo audio application. Build one first for performance testing to ensure that this circuit really wongking well with great audio performance.

The power supply used for this circuit is a symmetrical / dual polarity type. You need 4 amperes minimum of transformer with +/- 45V output. For stereo application, use about 8 amperes, although the 5A transformer is good enough 😀 . You may use the power supply circuit design on this post: 200W Power Amplifier using Transistor

200W MOSFET Amplifier PCB Layout Design

Bottom / Chopper PCB Design

Top PCB Design / Component Placement

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